Design and evaluation of automotive power module : 650V GaN E-HEMT with meandered interconnection and integrated motor-inverter power module By Jihwan Seong A thesis submitted to the g… Read More

Rohm has co-packaged a gate driver and a 650V GaN power transistor to ease the design of power supplies in servers and ac adaptors. “While GaN hemts are expected to … The post… Read More

ROHM Semiconductor today announced the BM3G0xxMUV-LB series of power stage ICs with built-in 650V GaN HEMTs and gate drivers. The devices are ideal for primary power supplies… Read More

GaN HEMTs: Revolutionizing RF and Microwave Applications Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are rapidly gaining traction in the world of radio frequency (RF) an… Read More

DigiKey, a leading global commerce distributor offering the largest selection of technical components and automation products in stock for immediate shipment, announced that it has significa… Read More

GaN Power Amplifiers: Boosting Performance in Wireless Communication Systems Gallium Nitride (GaN) power amplifiers are rapidly gaining traction in the wireless communication industry, thank… Read More

Cambridge GaN Devices new Application Interface Boards enable users to try icegan ics in existing designs without pcb re-layout Cambridge GaN Devices has introduced a range of Application I… Read More

Cambridge, UK – Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener e… Read More

Cambridge GaN Devices (CGD), the fabless clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices. CGD make greener electronics possible and will re… Read More

Exploring the Key Components and Applications of Radio Frequency Power Amplifiers (RFPA) Radio Frequency Power Amplifiers (RFPA) are critical components in wireless communication systems, pl… Read More

Cambridge, UK – Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electr… Read More

Cambridge, UK – Cambridge GaN Devices (CGD) has announced that independent, third-party research by leading academic research establishment, Virginia Tech University, demonst… Read More

Cambridge, UK – Cambridge GaN Devices (CGD) will present several papers at the Applied Power Electronics Conference (APEC). It will cover strategic views on sustainability an… Read More

The commercial hydrodynamics package (left) predicts that electron temperatures can drop below the ambient temperature (300 kelvins, or 80 degrees Fahrenheit in this si… Read More

Imec has presented a Monte Carlo Boltzmann modeling framework that uses microscopic heat carrier distributions to predict 3D thermal transport in advanced RF devices intended for 5G and 6G… Read More

The study objectives of this report are: Tends to focus on the world’s largest Gallium Nitride (GaN) Substrates manufacturers, defining, describing, and analyzing the company’… Read More

The attenuator is a control component, the main function of which is to reduce the strength of the signal passing through it. This type of component is generally used to balance signal level… Read More

Minimized R&D efforts and costs as well as robust and highly efficient operation of medium-voltage gallium-nitride (GaN) switches are key requirements for modern power electronics system… Read More

As the whole world is picking up the pace in the global e-mobility sector, the importance of an array of solutions that circumscribes an electric vehicle which will enable the smooth and coh… Read More

Munich, Germany and Osaka, Japan – Infineon Technologies AG and Panasonic Corporation have signed an agreement for the joint development and production of the second generation (Gen2)… Read More

Transparency Market Research, in its latest report, indicates that the GaN industrial devices market is fueled by the introduction of advanced technology, large-scale production, increasing… Read More

Munich, Germany – Minimized R&D efforts and costs as well as robust and highly efficient operation of medium-voltage gallium-nitride (GaN) switches are key requirements for modern… Read More

Advanced analysis of GaN-on-Si high electron mobility transistors (HEMTs) GaN-on-Si technology has evolved from extensive research activities and is now entering global large-volume prod… Read More

Gallium Nitride Efficacy for High Reliability Forward Converters in Spacecraft Aidan Mac Phillips, M.S. University of Pittsburgh, 2020 This thesis was presented by Aidan Mac Phill… Read More

Introduction Electric motors have shaped the world, and continue to do so at all levels. They range from small motors that automate simple household functions to heavy-duty motors that ca… Read More

 Master's Thesis Design, Control, and Implementation of High Frequency LLC Resonant Converter Hwa-Pyeong Park Department of Electrical and Computer Engineering  Abstract… Read More

With each passing day, different methods are being discovered for utilizing diamonds in different technological applications. Using them with various elements is helping scientists find easi… Read More

Malaviya National Institute of Technology Jaipur (MNIT) invites applications from Indian nationals for the post of Junior Research Fellow (JRF) Electronics & Communication Engineering. I… Read More