Mitsubishi Electric Corporation has announced the development of a new electro-absorption modulator laser diode (EML) Chip that can transmit data at speeds of up to 200Gbps. This is double the speed of the company’s previous 100Gbps Eml Chip, achieved through a hybrid waveguide structure that combines a buried heterostructure laser diode and a high-mesa waveguide electro absorption modulator. The new chip also supports coarse wavelength division multiplexing (CWDM) of four wavelengths, which allows for the multiplexing of optical signals of different wavelengths in a single fiber, reducing the number of fibers required.

Improved Operational Speed and 4-Wavelength Support

Thanks to its unique hybrid waveguide structure, the new EML chip from Mitsubishi Electric achieves high-speed operation of up to 200Gbps, high extinction ratio, and high output power. This improved operational speed means that the chip can help raise the transmission speed of optical transceivers used in data centers to keep up with growing demand for video distribution services and cloud computing. The chip’s 4-wavelength support for CWDM further increases transmission speed, allowing for up to 800Gbps using four chips or 1.6Tbps using eight chips.

Presenting the New Chip and Future Developments

Mitsubishi Electric will showcase the new EML chip at the Optical Fiber Communication Conference and Exhibition (OFC) 2023 in San Diego, USA, from March 5-9. The company plans to begin mass production of the chip in 2024 and is also considering expanding support to eight wavelengths for compatibility with additional transmission methods.

Environmental Awareness

Mitsubishi Electric’s new EML chip is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU and (EU) 2015/863, demonstrating the company’s commitment to environmental awareness.

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