Researchers from the Institute for Basic Science in South Korea have made a significant breakthrough in utilizing Random Telegraph Noise (RTN) in semiconductors. RTN is a type of unwanted electronic noise that can cause fluctuations and errors in signal processing. Led by Professor Lee Young Hee, the team introduced vanadium in tungsten diselenide (V-WSe2) as a minute magnetic dopant in a vdW-layered semiconductor.

To overcome the limitations of high contact resistance in lateral devices, the researchers developed a vertical magnetic tunneling junction device with layers of V-WSe2 sandwiched between graphene electrodes. This device demonstrated inherent quantum states, such as magnetic fluctuations and high-amplitude RTN signals, with just a small vanadium doping concentration of approximately 0.2%.

Through resistance measurement experiments, the team observed RTNs with a high amplitude of up to 80% between two-stable states. The bistable magnetic state, characterized by resistance fluctuations, was influenced by intralayer and interlayer coupling among the magnetic domains. By analyzing the RTN histogram and noise power spectrum, the researchers could identify this state.

An exciting discovery was the researchers’ ability to switch the bistable magnetic state and the cut-off frequency of the RTN simply by changing the voltage polarity. This finding opens up possibilities for 1/f2 noise spectroscopy in magnetic semiconductors and offers magnetic switching capabilities in spintronics.

Collaborative interdisciplinary research was conducted with experts from Sookmyung Women’s University and Harvard University. The team’s work was published in Nature Electronics.

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