Samsung Electronics, a leading provider of advanced Memory technology, hosted its annual Memory Tech Day to showcase new memory solutions and innovations that will drive technological advancements in various applications, including cloud computing, edge devices, and automotive vehicles.
The event, attended by around 600 customers, partners, and industry experts, served as a platform for Samsung executives to discuss the company’s “Memory Reimagined” vision. They discussed long-term plans to maintain memory technology leadership, market trends, and sustainability goals. Additionally, Samsung unveiled new product innovations such as the HBM3E Shinebolt, LPDDR5X CAMM2, and Detachable AutoSSD.
During the keynote address, Jung-Bae Lee, President and Head of Memory Business at Samsung Electronics, outlined how Samsung plans to overcome challenges in the hyperscale era through innovations in transistor structures and materials. Samsung is working on new 3D structures for sub-10-nanometer DRAM, which will enable larger capacities exceeding 100 gigabits. They are also developing NAND flash breakthroughs to introduce 1,000-layer vertical NAND.
Lee stated, “The new era of hyperscale AI has brought the industry to a crossroads where innovation and opportunity intersect, presenting a time with potential for great leaps forward, despite the challenges.” He emphasized Samsung’s commitment to driving innovation and collaboration with customers and partners to deliver solutions that expand possibilities.
One of the highlighted products at the event was the HBM3E Shinebolt, a next-generation HBM3E DRAM. Designed to power next-generation AI applications, Shinebolt improves total cost of ownership and accelerates AI-model training and inference in data centers. With a speed of 9.8 gigabits-per-second per pin, it can achieve transfer rates exceeding 1.2 terabytes-per-second. Samsung has optimized its non-conductive film technology to enable higher layer stacks and enhance thermal characteristics.
In addition to Shinebolt, Samsung showcased other memory solutions catering to various needs. These included the 32Gb DDR5 DRAM with the industry’s highest capacity, the industry’s first 32Gbps GDDR7, and the petabyte-scale PBSSD, which enhances storage capabilities for server applications.
Samsung also introduced memory solutions for edge devices, supporting high-performance, high-capacity, low-power, and small form factors. The 7.5Gbps LPDDR5X CAMM2, expected to revolutionize the next-generation PC and laptop DRAM market, and the 9.6Gbps LPDDR5X DRAM were among the solutions highlighted.
Furthermore, Samsung presented its Detachable AutoSSD, which plays a vital role in the advancement of autonomous driving solutions. This SSD allows data access from a single SSD to multiple System on Chips (SoCs) through virtual storage, enabling high-bandwidth and high-capacity data sharing between SoCs. Samsung also displayed automotive memory solutions such as high-bandwidth GDDR7 and LPDDR5X with a more compact package size.
In line with its commitment to sustainability, Samsung emphasized innovations in its semiconductor operations to increase energy efficiency and minimize environmental impact. They are working towards ultra-low-power memory technologies that reduce power consumption, incorporating recycled materials in portable SSD products to lower carbon footprint, and developing next-generation solutions that reduce energy usage for server systems.
Samsung’s semiconductor business aims to tackle global climate issues through its sustainability initiative, “technology that makes technology sustainable.” The company continues to collaborate with stakeholders across the semiconductor value chain, including customers and partners, to drive innovation and address environmental challenges.
For more information about Samsung Semiconductor’s solutions and the Memory Tech Day 2023 event, visit https://semiconductor.samsung.com/events/techday-memory-2023/. A recap of the event will be published at a later date.
The post “Breaking Boundaries: Samsung Electronics Unveils Next-Gen Innovations at Memory Tech Day 2023 to Pioneer the Hyperscale AI Revolution” first appeared on TECH FY.
