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Si photodiode S15289-33 hamamatsu High UV resistant back-illuminated CSP structure

Si photodiode S15289-33 hamamatsu High UV resistant and back-illuminated Si Photodiode with CSP structure.

hamamatsu S15289-33 is a back-illuminated type Si photodiode that has achieved high reliability for monitoring ultraviolet light. It exhibits low sensitivity deterioration under UV light irradiation and is suitable for applications such as monitoring intense UV light sources. It is designed with minimal dead space around the product. This makes it possible to arrange multiple products side by side.

Download the datasheet for Si photodiode S15289-33 hamamatsu

Si-photodiode-S15289-33-hamamatsu-datasheet-PDFDownload

Features
-High sensitivity in UV region
-High reliability in UV light irradiation
-Compatible with lead-free solder reflow

Photosensitive area 2.5 × 2.5 mm
Number of elements 1
Package Glass epoxy
Package category CSP
Cooling Non-cooled
Reverse voltage (max.) 10 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 1000 nm
Photosensitivity (typ.) 0.54 A/W
Dark current (max.) 300 pA
Rise time (typ.) 30 μs
Terminal capacitance (typ.) 70 pF



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Si photodiode S15289-33 hamamatsu High UV resistant back-illuminated CSP structure

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