A material that permit or allows flow of electrons are called Conductors (e.g., gold, silver, copper, etc.).Materials that block flow of electrons are called Insulators (e.g., rubber, glass, Teflon, mica, etc.).Materials whose conductivity falls between those of conductors and insulators are called Semiconductors. Semiconductors are “part-time” conductors, whose conductivity can be controlled. That’s why we have to use semiconductors in Electronic component’s called as Diode, Transistor, etc.
PN junction Depletion region. In N-type side the concentration of electrons are high, so they move towards the junction is called depletion. In P-type side the concentration of holes are high, so they are move towards the junction.
Silicon is the most common material used to build semiconductor devices. Si is the main ingredient of sand and it is estimated that a cubic mile of seawater contains 15,000 tons of Si. Si is spun and grown into a crystalline structure and cut into wafers to make electronic devices. An Atom in a pure silicon wafer contains four electrons in outer orbit (called valence Electrons) .Germanium is another semiconductor material with four Valence Electrons. In the crystalline lattice structure of Si, the valence electrons of every Si atom are locked up in covalent bonds with the valence electrons of four neighboring Si atoms. In pure form, Si wafer does not contain any free charge carriers. An applied voltage across pure Si wafer does not yield electron flow through the wafer. A pure Si wafer is said to act as an insulator. In order to make useful semiconductor devices, materials such as phosphorus (P) and boron (B) are added to Si to change Si’s conductivity.
N-Type Silicon Penta-valent impurities such as phosphorus, arsenic, antimony, and bismuth have 5 valence electrons. When phosphorus impurity is added to Si, every phosphorus atom’s four valence electrons are locked up in covalent bond with valence electrons of four neighboring Si atoms. However, the 5th valence electron of phosphorus atom does not find a binding electron and thus remains free to float. When a voltage is applied across the silicon-phosphorus mixture, free electrons migrate toward the positive voltage end. When phosphorus is added to Si to yield the above effect, we say that Si is doped with phosphorus. The resulting mixture is called N-type silicon (N: negative charge carrier silicon). The penta valent impurities are referred to as donor impurities.
P-Type Silicon Trivalent impurities e.g., boron, aluminum, indium, and gallium have 3 valence electrons. When boron is added to Si, every boron atom’s three valence electrons are locked up in covalent bond with valence electrons of three neighboring Si atoms. However, a vacant spot “hole” is created within the covalent bond between one boron atom and a neighboring Si atom. The holes are considered to be positive charge carriers. When a voltage is applied across the silicon-boron mixture, a hole moves toward the negative voltage end while a neighboring electron fills in its place. When boron is added to Si to yield the above effect, we say that Si is doped with boron. The resulting mixture is called P-type silicon (P: positive charge carrier silicon). The trivalent impurities are referred to as acceptor impurities. The hole of boron atom points towards the negative terminal. The electron of neighboring silicon atom points toward positive terminal. The electron from neighboring silicon atom falls into the boron atom filling the hole in boron atom and creating a “new” hole in the silicon atom. It appears as though a hole moves toward the negative terminal.
A Diode is a 2 lead semiconductor that acts as a one way gate to electron flow. Diode allows current to pass in only one direction. A PN-junction diode is formed by joining together n-type and p-type silicon. In practice, as the n-type Si crystal is being grown, the process is abruptly altered to grow p-type Si crystal. Finally, a glass or plastic coating is placed around the joined crystal. The p-side is called anode and the n-side is called cathode. When the anode and cathode of a PN-junction diode are connected to external voltage such that the potential at anode is higher than the potential at cathode, the diode is said to be forward biased. When potential at anode is smaller than the potential at cathode, the diode is said to be reverse biased. In a reverse-biased diode current is blocked.
Also read :
Also read :
- How to form a PN Junction by using semiconductor
- Easy to learn PN Junction Diode
- 5 things you need to know about analysis and overview of pn junction diode
- Get awesome info about basic electronics here
