GlobalFoundries has been awarded $35 million in federal funding from the U.S. government to accelerate the manufacturing of GF’s differentiated gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont. This funding brings GF closer to large-scale production of Gan Chips, which are unique in their ability to handle high voltages and …
GlobalFoundries Awarded $35 Million Funding from U.S. Government to Accelerate Manufacturing of Next-Generation GaN Chips Read More »
Der Beitrag GlobalFoundries Awarded $35 Million Funding from U.S. Government to Accelerate Manufacturing of Next-Generation GaN Chips erschien zuerst auf Electronics Update.