A technical paper titled “Resistless EUV lithography: photon-induced oxide Patterning on silicon” was published by researchers at Paul Scherrer Institute, University College London, ETH Zürich, and EPFL. Abstract: “In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. Euv Lithography is the …

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Der Beitrag Patterning With EUV Lithography Without Photoresists erschien zuerst auf Electronics Update.