Samsung has announced it has begun mass production of its fifth-generation V-NAND Memory Tech. This speedy memory tech can reach speeds of up to a blistering 1.4Gbps and features more than 90 layers of data storage cells.
Alongside the announcement, Samsung also teased future QLC (quad-level cell) products. These high density NAND chips will likely be only for enterprise at first, but down the line they have potential to be tacked onto the low-end of Samsung’s V-NAND lineup to fill the gap somewhat between cheap hard drives and speedy, but expensive, SSDs.
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In the meantime, the fifth-generation 256Gb V-NAND is the first use of the “Toggle DDR 4.0” interface, which is a standard utilised to increase asynchronous NAND transfer speeds and let's this new memory tech hit speeds 40% faster than the last generation 64-layer tech. This allows it to breeze past transfer speed limitations of earlier V-NAND tech in the likes of the Samsung 970 Evo SSD, for example.
What does that mean for the next-gen of gaming SSDs from the memory giant? Samsung are touting improvements to read speeds and a 30% improvement to write speeds over fourth-gen NAND, so these new V-NAND chips could make for some pretty speedy SSDs compared to even the best M.2 drives on the market today.