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Samsung's next-gen V-NAND tech will be 40% faster than current SSDs

Samsung has announced it has begun mass production of its fifth-generation V-NAND Memory Tech. This speedy memory tech can reach speeds of up to a blistering 1.4Gbps and features more than 90 layers of data storage cells.

Alongside the announcement, Samsung also teased future QLC (quad-level cell) products. These high density NAND chips will likely be only for enterprise at first, but down the line they have potential to be tacked onto the low-end of Samsung’s V-NAND lineup to fill the gap somewhat between cheap hard drives and speedy, but expensive, SSDs.

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In the meantime, the fifth-generation 256Gb V-NAND is the first use of the “Toggle DDR 4.0” interface, which is a standard utilised to increase asynchronous NAND transfer speeds and let's this new memory tech hit speeds 40% faster than the last generation 64-layer tech. This allows it to breeze past transfer speed limitations of earlier V-NAND tech in the likes of the Samsung 970 Evo SSD, for example.

Samsung fifth generation V-NAND

What does that mean for the next-gen of gaming SSDs from the memory giant? Samsung are touting improvements to read speeds and a 30% improvement to write speeds over fourth-gen NAND, so these new V-NAND chips could make for some pretty speedy SSDs compared to even the best M.2 drives on the market today.

This post first appeared on PC Games News And Reviews From, please read the originial post: here

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Samsung's next-gen V-NAND tech will be 40% faster than current SSDs


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