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Nanosized Conducting Filaments Formed by Atomic-ScaleDefects in Redox-Based Resistive Switching Memories

By Hongchu Du, Chun-Lin Jia, Annemarie Koehl, Juri Barthel, Regina Dittmann, Rainer Waser and Joachim Mayer

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Chemistry of MaterialsDOI: 10.1021/acs.chemmater.7b00220

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Source:: http://feedproxy.google.com/~r/acs/cmatex/~3/bgFjprBkRlk/acs.chemmater.7b00220

      



This post first appeared on Measurement Databases For Industry & Science, please read the originial post: here

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Nanosized Conducting Filaments Formed by Atomic-ScaleDefects in Redox-Based Resistive Switching Memories

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